中频电炉设施
[来源:原创] [作者:aywl] [日期:17-02-10] [浏览次数:]
中频电炉设施是一种将三相工频交流电能静止变换成中频单相交流电能的静止变频装置。设施分中频电源、无芯感应炉体(中频炉)两部分,辅助部分为循环水系统及工频供电系统(变压器或母线)。久立大功率中频电炉由KGPS型大功率中频电源12000KW~20000KW/24脉整流模式组成。这些大功率中频电炉目前主要用于熔炼,也非常适合大型金属(钢、铜、铝等)工件和型材(管、板、带、棒等)的升温加热。 Intermediate frequency electric furnace is a kind of three-phase ac power frequency electrical static transformation into intermediate frequency of single-phase ac power static frequency conversion device. Facilities of intermediate frequency power supply, coreless induction furnace (intermediate frequency furnace) two parts, auxiliary part for circulating water system and power supply system of power frequency transformer (or bus). Long standing high power medium frequency electric furnace from KGPS type high power medium frequency power 12000 kw to 20000 kw / 24 pulse rectifier pattern. These high power medium frequency electric furnace is mainly used for smelting, is also very suitable for large metal (steel, copper, aluminum, etc.) artifacts and profiles (pipe, plate, belt, rods, etc.) of the warming heat. 1、中频电源:由中频电源柜、电容补偿架两部分组成。 1, medium frequency power supply: the medium frequency power supply cabinets, capacitance compensation in two parts. 随着设施功率的提高,中频电源的供电电压也有所不通:目前国内常见的有380V,575V,660V,750V,950V,1100V;供电相数分为三相,六相,十二相。 With the improvement of power facilities, power supply voltage of intermediate frequency power supply is not: the current domestic common 380 v, 575 v, 660 v, 750 v, 950 v, 1100 v; Power supply phase number is divided into three phase, and six and twelve phase.   中频电源柜构成:主开关,整流可控硅,逆变可控硅,主控制板,平波电抗器。 Medium frequency power supply cabinet: the main switch, rectifier thyristor, thyristor inverter, the main control board, flat wave reactor.   主控制板的重要性:相当于人的大脑。目前采用最广泛的是恒功率主控制板,有波峰焊和手工焊两种工艺,波峰焊工艺稳定,故障率低。 The importance of the main control board: the equivalent of the human brain. The most widely used is a main control board, constant power has two kinds of wave crest welding and manual welding process, wave soldering process stability, low failure rate.   炉体部分:普通的采用铝壳感应炉,稍好的不锈钢壳感应炉,好一些的采用液压磁轭钢壳感应炉。倾炉方式分减速机倾炉和液压倾炉两种。 Furnace parts: ordinary aluminum shell induction furnace, induction furnace, a good stainless steel shell better using hydraulic yoke steel shell induction furnace. Reducer tilting furnace turndown way points and two hydraulic tilting furnace.   工频供电系统:供电变压器,低压开关柜。 Power frequency power supply system: power supply transformer, low voltage switchgear.   可控硅:可控硅是中频电源的核心,它的准确使用对设施的运行至关重要。一台设施一年损坏三五只可控硅尚属正常,如果经常烧硅,电炉停摆,影响出产,就要引起警觉了。可控硅的工作电流从几百安到几千安,电压通常在一两千伏,良好的主控板保护和良好的水冷条件是必备的。 Thyristor, thyristor is the core of the medium frequency power supply, it is very important for the accurate use of facilities operation. A facilities damaged a year SanWuZhi SCR is normal, if often burn silicon furnace lockout, influence produced, is about to cause alarm. The working current of thyristor from several hundred to several thousand Ann Ann, usually in a couple of kv voltage, good master plate protection and good water conditions is essential.   可控硅的超负荷特性:可控硅的损坏称为击穿。在正常的水冷条件下,电流超负荷能力可达110%以上;无电压超负荷能力,就是说,硅在超压情况下,是肯定损坏的。再考虑到浪涌电压,厂家在制造设施时,往往都按工作电压的3-4倍值来选择硅元件。 SCR overload characteristics: the damage of the silicon controlled is called the breakdown. Under normal water condition, the current overload capacity can reach more than 110%; No voltage overload ability, that is to say, the silicon in overpressure situation, is certainly damage. Again considering the surge voltage, manufacturer is in manufacturing facilities, usually 3 to 4 times according to the working voltage values to select silicon components. 可控硅的准确安装压力:150-200KG/cm2。在设施出厂时,一般是用油压机压装。人工用普通的扳手用最大力气也达不到该数值,所以人工装压时,不必要担心硅会被压坏;压松了,反而会由于散热不良而烧硅。 Silicon controlled accurately to install pressure: 150-200 kg/cm2. When the facility factory, are generally use hydraulic press pressure equipment. Artificial with ordinary wrench with maximum strength also amounted to less than the value, so when people work pressure, unnecessary worry about silicon will be crushed; Pressure is loose, it will burn silicon due to poor heat dissipation.
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