中频电源柜构成
[来源:原创] [作者:aoutmy] [日期:17-04-22] [浏览次数:]
中频电源柜构成:主开关,整流可控硅,逆变可控硅,主控制板,平波电抗器。 Medium frequency power supply cabinet: the main switch, rectifier thyristor, thyristor inverter, the main control board, flat wave reactor. 主控制板的重要性:相当于人的大脑。目前采用最广泛的是恒功率主控制板,有波峰焊和手工焊两种工艺,波峰焊工艺稳定,故障率低。 The importance of the main control board: the equivalent of the human brain. The most widely used is a main control board, constant power has two kinds of wave crest welding and manual welding process, wave soldering process stability, low failure rate. 炉体部分:普通的采用铝壳感应炉,稍好的不锈钢壳感应炉,好一些的采用液压磁轭钢壳感应炉。倾炉方式分减速机倾炉和液压倾炉两种。 Furnace parts: ordinary aluminum shell induction furnace, induction furnace, a good stainless steel shell better using hydraulic yoke steel shell induction furnace. Reducer tilting furnace turndown way points and two hydraulic tilting furnace. 工频供电系统:供电变压器,低压开关柜。 Power frequency power supply system: power supply transformer, low voltage switchgear. 可控硅:可控硅是中频电源的核心,它的准确使用对设施的运行至关重要。一台设施一年损坏三五只可控硅尚属正常,如果经常烧硅,电炉停摆,影响出产,就要引起警觉了。可控硅的工作电流从几百安到几千安,电压通常在一两千伏,良好的主控板保护和良好的水冷条件是必备的。 Thyristor, thyristor is the core of the medium frequency power supply, it is very important for the accurate use of facilities operation. A facilities damaged a year SanWuZhi SCR is normal, if often burn silicon furnace lockout, influence produced, is about to cause alarm. The working current of thyristor from several hundred to several thousand Ann Ann, usually in a couple of kv voltage, good master plate protection and good water conditions is essential. 可控硅的超负荷特性:可控硅的损坏称为击穿。在正常的水冷条件下,电流超负荷能力可达110%以上;无电压超负荷能力,就是说,硅在超压情况下,是肯定损坏的。再考虑到浪涌电压,厂家在制造设施时,往往都按工作电压的3-4倍值来选择硅元件。 SCR overload characteristics: the damage of the silicon controlled is called the breakdown. Under normal water condition, the current overload capacity can reach more than 110%; No voltage overload ability, that is to say, the silicon in overpressure situation, is certainly damage. Again considering the surge voltage, manufacturer is in manufacturing facilities, usually 3 to 4 times according to the working voltage values to select silicon components.
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